Junction Temperature and Thermal Resistance of Ultrafast Sub-micron InP/InGaAs SHBTs
نویسندگان
چکیده
This work reports experimental data for the thermal resistance and junction temperature of high-performance InP/InGaAs single heterojunction bipolar transistors (SHBTs). The effects of device scaling and layer epitaxial design are investigated, and a theoretical model is developed to examine the results.
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